BSS192P H6327

BSS192P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21 Type Package Pb-free BSS 192 P PG-SOT89 Yes 1 Drain pin 2 2 3 Gate pin1 Source pin 3 2 VPS05162 Tape and Reel Information H6327: 1000 pcs/reel Marking KC Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.19 TA=70°C -0.1 ID puls -0.76 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.19A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Rev 1.7 Class 1a Page 1 2012-12-03 BSS 192 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. RthJS - - 10 RthJA - - 125 Characteristics Thermal resistance, junction - soldering point K/W (Pin 2) Thermal resistance, junction - ambient, leaded Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-130µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10 20 Ω RDS(on) - 8.3 15 RDS(on) - 7.7 12 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.1A Drain-source on-state resistance VGS =-10V, ID =-0.19A Rev 1.7 Page 2 2012-12-03 BSS 192 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.19 0.38 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.1A Input capacitance Ciss VGS =0, VDS =-25V, - 83 104 Output capacitance Coss f=1MHz - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD =-125V, VGS =-10V, - 4.7 7 Rise time tr ID =-0.19A, RG=2Ω - 5.2 8 Turn-off delay time td(off) - 72 108 Fall time tf - 50 75 - -0.2 - -1.9 -2.4 - -4.9 -6.1 V(plateau) VDD =-200V, ID=-0.19A - -2.63 - IS - - -0.19 A - - -0.76 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.19A VDD =-200V, ID=-0.19A, -0.25 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.19A - -0.78 -1.1 V Reverse recovery time trr VR =-125V, IF =lS , - 46 57 ns Reverse recovery charge Qrr diF /dt=100A/µs - 72 90 nC Rev 1.7 Page 3 2012-12-03 BSS 192 P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.1 BSS 192 P -0.2 W A 0.9 -0.16 0.8 -0.14 0.7 ID Ptot BSS 192 P -0.12 0.6 -0.1 0.5 -0.08 0.4 -0.06 0.3 -0.04 0.2 -0.02 0.1 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 °C 1 BSS 192 P 10 3 BSS 192 P K/W A 10 2 -10 0 tp = 240.0µs Z thJA 10 1 /I D ID 1 ms 10 0 DS 10 ms on ) = V -10 -1 D = 0.50 0.20 R DS ( 10 -1 0.10 -10 -2 10 -2 10 -3 0.05 0.02 DC -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 VDS Rev 1.7 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2012-12-03 BSS 192 P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 15 10V A 6V 4.6V 4V 3.6V 0.5 3.4V 3.2V 2.8V 0.4 2.6V 2.4V Ω 2.4V 2.6V 2.8V 3.2V 12 RDS(on) -I D 0.7 10.5 9 7.5 0.3 10V 6V 4.6V 4V 3.6V 3.4V 6 4.5 0.2 3 0.1 1.5 0 0 1 2 3 4 5 6 7 V 8 0 0 10 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 0.7 0.8 A S 0.6 g fs -I D 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 0 0.1 0.5 1 1.5 2 2.5 V 3.5 -VGS Rev 1.7 0 0 0.1 0.2 0.3 0.4 0.5 0.7 A -ID Page 5 2012-12-03 BSS 192 P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.19 A, VGS = -10 V parameter: VGS = VDS 32 BSS 192 P 2.2 Ω V - VGS(th) RDS(on) 98% 24 20 1.8 1.6 typ. 1.4 16 1.2 98% 12 1 typ 8 0.8 4 0 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 0 pF BSS 192 P A Ciss -10 -1 C IF 10 2 Coss 10 1 -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 0 0 6 12 18 24 V 36 -VDS Rev 1.7 -10 -3 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2012-12-03 BSS 192 P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate ) V(BR)DSS = f (Tj ) parameter: ID = -0.19 A pulsed, Tj = 25 °C -16 BSS 192 P BSS 192 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 20% -260 50% -6 -255 80% -250 -245 -4 -240 -235 -2 -230 0 0 1 2 3 4 5 6 nC 7.5 |Q G| Rev 1.7 -225 -60 -20 20 60 100 °C 180 Tj Page 7 2012-12-03 BSS 192 P Rev 1.7 Page 8 2012-12-03